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TYPICAL PERFORMANCE CURVES (R)
APT30GN60B APT30GN60BG*
APT30GN60B(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.
G C E
TO -2 47
* * * *
* 600V Field Stop
Trench Gate: Low VCE(on) Easy Paralleling 10s Short Circuit Capability 175C Rated
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT30GN60B(G) UNIT Volts
600 30 63 37 75 75A @ 600V 203 -55 to 175 300
Amps
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) Gate Threshold Voltage (VCE = VGE, I C = 430A, Tj = 25C) MIN TYP MAX Units
600 5.0 1.1 5.8 1.5 1.7 25
2
6.5 1.9
Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
Volts
I CES I GES RG(int)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
A nA
7-2005 050-7616 Rev A
TBD 300 N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT30GN60B(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 30A TJ = 150C, R G = 4.3
7,
MIN
TYP
MAX
UNIT pF V nC
1750 70 50 9.0 165 10 90
VGE =
VGE = 15V
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H,VCE = 600V VCC = 360V, VGE = 15V, TJ = 150C, R G = 4.3 7 Inductive Switching (25C) VCC = 400V VGE = 15V I C = 30A
75 6 12 14 155 55 525 565 700 12 14 180 75 555 950 895
A
s
ns
RG = 4.3 7 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 30A
ns
Turn-on Switching Energy (Diode)
66
TJ = +125C
RG = 4.3 7
J
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.74 N/A 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
7-2005 Rev A
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7616
TYPICAL PERFORMANCE CURVES
90 80 IC, COLLECTOR CURRENT (A) 70 60 50 40 30 20 10 0 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
V
GE
= 15V
100
APT30GN60B(G)
15V 13V 12V
IC, COLLECTOR CURRENT (A)
80 11V 60 10V 40 9V 20 8V 0
TJ = -55C TJ = 25C
TJ = 125C
TJ = 175C
7V
90 80 IC, COLLECTOR CURRENT (A) 70 60 50 40 30 20 10
FIGURE 1, Output Characteristics(TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
16 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 30A C T = 25C
J
0 2 4 6 8 10 12 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
TJ = -55C TJ = 25C TJ = 125C
VCE = 120V VCE = 300V VCE = 480V
TJ = 175C
8 6 4 2 0 0 20
0
0
3 6 9 12 15 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
40 60 80 100 120 140 160 180 200 GATE CHARGE (nC) FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.0 2.5 2.0 1.5 1.0 0.5 0 IC = 15A
3.5 3.0 2.5 2.0 1.5 1.0 0.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 60A IC = 30A
IC = 60A
IC = 30A
IC = 15A
9 10 11 12 13 14 15 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.30
8
25 50 75 100 125 150 175 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 90
0
0
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
80 70 60 50 40 7-2005 050-7616 Rev A 30 20 10 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 -25
1.20
1.10
1.00
0 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
16 td(ON), TURN-ON DELAY TIME (ns) 14 12 10 8 6 4
VCE = 400V T = 25C, or =125C L = 100H
250 VGE = 15V td (OFF), TURN-OFF DELAY TIME (ns)
APT30GN60B(G)
200
150
VGE =15V,TJ=125C VGE =15V,TJ=25C
100
50
2 RJ = 4.3 G 0
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
60 50 tf, FALL TIME (ns) tr, RISE TIME (ns) 40 30 20 10 0
TJ = 25 or 125C,VGE = 15V RG = 4.3, L = 100H, VCE = 400V
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
100
RG = 4.3, L = 100H, VCE = 400V
0
VCE = 400V RG = 4.3 L = 100H
80
TJ = 125C, VGE = 15V
60
TJ = 25C, VGE = 15V
40
20
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
3000 EON2, TURN ON ENERGY LOSS (J) 2500 2000 1500 1000 500
TJ = 25C
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
1600 EOFF, TURN OFF ENERGY LOSS (J) 1400 1200 1000 800 600 400 200
TJ = 25C
= 400V V CE = +15V V GE R = 4.3
G
0
V = 400V CE V = +15V GE R = 4.3
G
TJ = 125C
TJ = 125C
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
6000 SWITCHING ENERGY LOSSES (J) 5000 4000
Eon2,60A Eoff,60A
= 400V V CE = +15V V GE T = 125C
J
0
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
3000 SWITCHING ENERGY LOSSES (J) 2500 2000 1500 1000 500 0
V = 400V CE V = +15V GE R = 4.3
G
0
Eon2,60A Eoff,60A
3000 2000
Eon2,30A
7-2005
1000 0
Eoff,30A Eon2,15A
Eon2,30A Eoff,30A Eon2,15A
Eoff,15A
Rev A
Eoff,15A
050-7616
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
3,000 IC, COLLECTOR CURRENT (A) Cies
100 90 80 70 60 50 40 30 20 10
APT30GN60B(G)
1,000 C, CAPACITANCE ( F) 500
P
100 50
Coes Cres
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.80 0.70 0.60 0.7 0.50 0.40 0.30 0.20 0.10 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.5
Note:
ZJC, THERMAL IMPEDANCE (C/W)
D = 0.9
PDM
0.3
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
130
RC MODEL
Junction temp. (C)
FMAX, OPERATING FREQUENCY (kHz)
50
0.239
0.00158
Power (watts)
10 5
T = 125C J T = 75C C D = 50 % V = 400V CE R = 4.3
G
0.244
0.00349
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
F
fmax2 = Pdiss =
0.258 Case temperature. (C)
0.0793
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10 15 20 25 30 35 40 45 50 55 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
5
050-7616
Rev A
7-2005
APT30GN60B(G)
APT40DQ60
10% td(on) tr 90%
Gate Voltage
TJ = 125C
Collector Current
V CC
IC
V CE
5% Collector Voltage
5%
10%
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off) 90% Collector Voltage tf 10%
TJ = 125C
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
7-2005
1.01 (.040) 1.40 (.055)
Rev A
Gate Collector Emitter
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
050-7616
Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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